Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels

Citation
G. Park et al., Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels, APPL PHYS L, 73(23), 1998, pp. 3351-3353
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
23
Year of publication
1998
Pages
3351 - 3353
Database
ISI
SICI code
0003-6951(199812)73:23<3351:LFIQDW>2.0.ZU;2-G
Abstract
Data are presented on the lasing transitions from InGaAs/GaAs quantum dots that exhibit four well-resolved energy transitions, with the electronic sta te density of a two- dimensional harmonic oscillator. Lasing has been obtai ned on the second and third transitions, depending on the cavity (gain) len gth, with the longest lasing wavelength measured to be 1.19 mu m. The tempe rature dependence of threshold is studied and regions of nearly temperature -independent threshold are found. Interesting aspects of the unique electro nic state density for lasers are discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)03749-8].