Activation fields in ferroelectric thin film capacitors: Area dependence

Citation
Tk. Song et al., Activation fields in ferroelectric thin film capacitors: Area dependence, APPL PHYS L, 73(23), 1998, pp. 3366-3368
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
23
Year of publication
1998
Pages
3366 - 3368
Database
ISI
SICI code
0003-6951(199812)73:23<3366:AFIFTF>2.0.ZU;2-D
Abstract
We report the activation field characteristics of (La,Sr)CoO3/Pb(Nb,Zr,Ti)O -3/CoO3 capacitors with areas varying from 13 to 9600 mu m(2). Switching pr operties such as maximum current and switching time depend on the capacitor area and measuring circuit elements, but the activation field is independe nt of capacitor area and measuring circuit parameters. Area independence of activation fields is also confirmed in (Pb,La)(Zr, Ti)O-3 thin film capaci tors. Two different approaches have been used to determine the activation f ield, yielding similar results. It is concluded that activation field is an intrinsic property and is a good quantitative measure of the ferroelectric switching properties. (C) 1998 American Institute of Physics. [S0003-6951( 98)02549-2].