We have used photoluminescence up conversion to study the carrier capture t
imes into intermixed InGaAs/GaAs quantum wells. We have found that the capt
ure into the intermixed wells is markedly faster than capture into the refe
rence (unintermixed) quantum wells. The reasons for the significant reducti
on in the capture time is related to the shape of the intermixed quantum we
ll. Such a reduction in the capture time is beneficial both in terms of the
quantum efficiency and the frequency response of intermixed optoelectronic
devices. (C) 1998 American Institute of Physics. [S0003-6951(98)01849-X].