Improved carrier collection in intermixed InGaAs/GaAs quantum wells

Citation
Lv. Dao et al., Improved carrier collection in intermixed InGaAs/GaAs quantum wells, APPL PHYS L, 73(23), 1998, pp. 3408-3410
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
73
Issue
23
Year of publication
1998
Pages
3408 - 3410
Database
ISI
SICI code
0003-6951(199812)73:23<3408:ICCIII>2.0.ZU;2-S
Abstract
We have used photoluminescence up conversion to study the carrier capture t imes into intermixed InGaAs/GaAs quantum wells. We have found that the capt ure into the intermixed wells is markedly faster than capture into the refe rence (unintermixed) quantum wells. The reasons for the significant reducti on in the capture time is related to the shape of the intermixed quantum we ll. Such a reduction in the capture time is beneficial both in terms of the quantum efficiency and the frequency response of intermixed optoelectronic devices. (C) 1998 American Institute of Physics. [S0003-6951(98)01849-X].