Citation
K. Akahane et al., Highly packed InGaAs quantum dots on GaAs(311)B, APPL PHYS L, 73(23), 1998, pp. 3411-3413
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
73
Issue
23
Year of publication
1998
Pages
3411 - 3413
Database
ISI
SICI code
0003-6951(199812)73:23<3411:HPIQDO>2.0.ZU;2-P
Abstract
We have fabricated highly packed and ordered In0.4Ga0.6As quantum dots (QDs
) array on GaAs(311)B substrate without coalescence of QDs. Reflection high
-energy electron diffraction and Auger spectra suggest the inhomogeneous di
stribution of In and Ga in QD. In concentration near the surface of QD is l
arger than that of the inside, and the inhomogeneous distribution of In and
Ga in QDs prevents QDs from merging. (C) 1998 American Institute of Physic
s. [S0003-6951(98)01349-7].