Current-induced persistent capacitance in Au/n-In0.08Ga0.92As0.51P0.49 Schottky contacts

The zero-bias capacitance of a Schottky diode formed on a nominally undoped In0.08Ga0.92As0.51P0.49 is found to be persistently increased after a high current injection at low temperatures. The increment of capacitance grows as the amplitude or duration of the current pulse is increased. When a high current is injected at low temperatures before the deep level transient sp ectroscopy measurements, the concentration of the so-called ET1 defects is decreased. It is discussed that all these results are related to the hole i njection from the Schottky contact and the charge-state controlled stabilit y of the ET1 defects. (C) 1998 American Institute of Physics. [S0003-6951(9 8)04749-4].