Halide chemical vapor deposition of Bi4Ti3O12

Bismuth titanate is an interesting ferroelectric material whose properties suggest applications in FETs and in displays. CVD has several advantages in preparing such materials, but a major issue is the selection of precursors . Commonly organometallics are used, but here halide precursors are used, t he main advantage being that they yield clean and well-define grain boundar ies. The results show that halogen-free and phase-pure bismuth titanate fil ms with a pronounced c-axis orientation can be deposited.