Surface quality of epitaxial CeO2 thin films grown on sapphire by aerosol MOCVD

Authors
Frohlich, K Souc, J Machajdik, D Jergel, M Snauwaert, J Hellemans, L
Citation
K. Frohlich et al., Surface quality of epitaxial CeO2 thin films grown on sapphire by aerosol MOCVD, CHEM VAPOR, 4(6), 1998, pp. 216
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMICAL VAPOR DEPOSITION
ISSN journal
09481907 → ACNP
Volume
4
Issue
6
Year of publication
1998
Database
ISI
SICI code
0948-1907(199812)4:6<216:SQOECT>2.0.ZU;2-F
Abstract
Cerium oxide has potential as an excellent material for buffer layers in hi gh-temperature superconductor thin films. Here a low pressure aerosol MOCVD process is used for preparing high quality (001) epitaxial ceria films on oriented sapphire substrates. By controlling the maximum temperature for th e volatilization of the precursor, a smooth surface with a roughness R-q = 0.56 nm is obtained (see Figure).