Anhydrous metal nitrates as volatile single source precursors for the CVD of metal oxide film

Authors
Colombo, DG Gilmer, DC Young, VG Campbell, SA Gladfelter, WL
Citation
Dg. Colombo et al., Anhydrous metal nitrates as volatile single source precursors for the CVD of metal oxide film, CHEM VAPOR, 4(6), 1998, pp. 220
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMICAL VAPOR DEPOSITION
ISSN journal
09481907 → ACNP
Volume
4
Issue
6
Year of publication
1998
Database
ISI
SICI code
0948-1907(199812)4:6<220:AMNAVS>2.0.ZU;2-8
Abstract
Anhydrous metal nitrates are useful as single source precursors for CVD of metal oxide films. MOCVD of such films can lead to incorporation of carbon or hydrogen into the films, so single source precursors that cleave directl y to metal oxide films with highly volatile byproducts are desirable. In th is communication it is shown that, with relatively little optimization, anh ydrous metal nitrates exhibit the necessary volatility and reactivity for C VD applications.