High performance AlGaN/GaN HEMT with improved ohmic contacts

Authors
Cai, SJ Li, R Chen, YL Wong, L Wu, WG Thomas, SG Wang, KL
Citation
Sj. Cai et al., High performance AlGaN/GaN HEMT with improved ohmic contacts, ELECTR LETT, 34(24), 1998, pp. 2354-2356
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
34
Issue
24
Year of publication
1998
Pages
2354 - 2356
Database
ISI
SICI code
0013-5194(19981126)34:24<2354:HPAHWI>2.0.ZU;2-Y
Abstract
Various metal films and rapid thermal annealing conditions were investigate d to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1 Om ega.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039 Omega.mm, corresponding to a contact resistance o f 5.38 x 10(-8)Omega.cm(2). The fabricated high electron mobility transisto rs with a 0.25 mu m length gate exhibit a cutoff frequency f(T) of 60 GHz a nd an f(max) of 100 GHz.