DYNAMIC GROWTH EFFECTS DURING LOW-PRESSURE DEPOSITION OF DIAMOND FILMS

Diamond films were deposited in a modified electron-cyclotron-resonanc e plasma system operating at pressures between 1.0 and 2.0 Torr, This system provides the advantage of efficient plasma generation due to ma gnetic enhancement and high diffusion rates due to relatively low-pres sure operation, Films were formed from preexisting seed layers providi ng high ''nucleation'' densities to promote rapid coalescence. Raman a nalysis of grown films showed a quality dependence on both deposition pressure and nucleation density, We speculate that the increased prese nce of amorphous carbon and larger film stresses is the result of grai n-boundary impurity effects in the seeded films, Oxygen addition impro ved film quality by reducing nondiamond carbon incorporation. (C) 1997 American Institute of Physics.