CHARACTERIZATION OF ELECTRON-EMISSION FROM PLANAR AMORPHOUS-CARBON THIN-FILMS USING IN-SITU SCANNING ELECTRON-MICROSCOPY

Citation
N. Missert et al., CHARACTERIZATION OF ELECTRON-EMISSION FROM PLANAR AMORPHOUS-CARBON THIN-FILMS USING IN-SITU SCANNING ELECTRON-MICROSCOPY, Applied physics letters, 70(15), 1997, pp. 1995-1997
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
70
Issue
15
Year of publication
1997
Pages
1995 - 1997
Database
ISI
SICI code
0003-6951(1997)70:15<1995:COEFPA>2.0.ZU;2-7
Abstract
Electron emission characteristics combined with in situ scanning elect ron microscope images have been measured on a series of amorphous carb on films grown by pulsed laser deposition. Uniform, reproducible curre nt-voltage characteristics without morphological damage are only obser ved with sequential voltage ramps less than or equal to 5 V/s for anod e-cathode gaps of 10-200 mu m. The field threshold and emission barrie r increase with laser energy density used during film growth. This dep endence of emission parameters on film growth conditions appears to be correlated with the presence of conducting filaments extending throug h the film thickness. (C) 1997 American Institute of Physics.