Presented here is proof-of-principle that a thin single crystal semico
nductor film-when twist-wafer bonded to a bulk single crystal substrat
e (of the same material)-will comply to the lattice constant of a diff
erent single crystal semiconductor thick film grown on its surface. In
our experiment, a 100 Angstrom film of GaAs was wafer bonded to a GaA
s bulk substrate, with a large twist angle between their [110] directi
ons. The resultant twist boundary ensures high flexibility in the thin
film. Dislocation-free films of In0.35Ga0.65P(similar to 1% strain) w
ere grown with thicknesses of 3000 Angstrom, thirty times the Matthews
-Blakeslee critical thickness, on twist-wafer-bonded films of GaAs. (C
) 1997 American Institute of Physics.