Room temperature InPSb/InAs and InPSb/InAs/InAsSb mid-infrared emitting diodes grown by MOVPE

Strained InAsSb heterostructures are important materials for a variety of n ew III-V based mid-infrared emitters. In the study InP0.69Sb0.31/InAs light -emitting diodes (LEDs) employing an InAs/InAs0.94Sb0.06 multiquantum-well (MQW) active region have been investigated. They were characterised using e lectro-optical techniques and X-ray diffractometry. The authors have measur ed the temperature dependence of electroluminescence (EL): at low temperatu res, the EL-intensity of the MQW diodes is higher than that of a simple PIN InPSb/InAs/InPSb structure. For both devices, room temperature EL could be resolved (emission wavelength of 3.3 mu m, FWHM of 70meV) which is related to InAs near-bandgap transitions. InAsP/InAsSb MQWs were grown to achieve higher antimony contents in the wells. The heterostructures were strain-bal anced and enabled an antimony incorporation of 24% with, at the same time, high structural quality. In the photoluminescence (PL) spectra of InAs0.95P 0.05/InAs0.86Sb0.14 MQWs strong features were observed around 4.2 mu m due to atmospheric CO2 absorption.