Fast tuning of 3.3 mu m InAsSb/InAsSbP diode lasers using nonlinear optical effects

InAsSb/InAsSbP double heterostructures diode lasers for the spectral region 3.3 mu m grown by liquid phase epitaxy have been investigated. Emission sp ectra, far-field patterns and wavelength tuning have been studied over a wi de current range from threshold value I-th up to 3I(th) at the temperature of liquid nitrogen. Current-controlled wavelength tuning has been obtained both towards shorter wavelengths (to 4.56 cm(-1)) and towards longer wavele ngths (up to 0.9 cm(-1)) at a temperature T = 77 K, at lasing generation th at maintains single mode. Comparison of the emission properties of lasers d riven by different types of current (short pulse current, sawtooth pulse cu rrent and quasi-CW regime) showed the same quantum-mechanical nature of cur rent tuning. A theoretical model of this nonlinear optical phenomenon is pr oposed. The estimated times of current tuning, defined mainly by the photon lifetime in the cavity, are about 10(-9)-10(-12) s.