Mid-infrared InSb and InAlSb diode lasers

Authors
Ashley, T Beswick, J Elliott, CT Jeffries, R Johnson, A Pryce, G
Citation
T. Ashley et al., Mid-infrared InSb and InAlSb diode lasers, IEE P-OPTO, 145(5), 1998, pp. 265-267
Citations number
15
Categorie Soggetti
Optics & Acoustics
Journal title
IEE PROCEEDINGS-OPTOELECTRONICS
ISSN journal
13502433 → ACNP
Volume
145
Issue
5
Year of publication
1998
Pages
265 - 267
Database
ISI
SICI code
1350-2433(199810)145:5<265:MIAIDL>2.0.ZU;2-2
Abstract
Diode lasers with an Tn(0.948)Al(0.052)Sb gain region have been grown by mo lecular beam epitaxy onto nominally matched InGaSb substrates, and onto mis matched InSb substrates. The former had a stimulated emission wavelength of 3.9 mu m at 77 K, with the threshold current density being 140 Acm(-2) and maximum operating temperature 165 K. The latter had a stimulated emission wavelength of 3.6 mu m at 77 K, with the threshold current density being 41 7 Acm(-2) and maximum operating temperature 160 K.