Interface-induced phenomena in type II antimonide-arsenide heterostructures

Type II antimonide-arsenide based heterostructures have recently received g reat attention from researchers engaged in the design of mid-infrared optoe lectronic devices. Magnetotransport properties of the semimetal channel and the interface electroluminescence were experimentally studied on type II b roken-gap GaInAsSb/InAs single heterojunctions grown by LPE with high quali ty interface. An electron channel with high Hall mobility was, for the firs t time, observed at the interface of isotype p-GaInAsSb/p-InAs heterojuncti ons with undoped and slightly doped quaternary layers at low temperatures. A depletion of the electron channel was found to be due to the heavy accept or doping level of the quaternary layer. The two-dimensional nature of the interface carriers was established by Shubnikov-de Haas oscillation experim ents at 1.8-4.2 K under magnetic fields up to 9-14 T. Intensive interface e lectroluminescence in the structures under study was observed in the spectr al range of 3-4 mu m at low temperatures (4.2-77 K). A model of the recombi nation transition at the type II broken-gap interface was proposed and expe rimentally confirmed. A new physical approach to the design of mid-infrared tunnelling-injection lasers is demonstrated.