Type II W, interband cascade and vertical-cavity surface-emitting mid-IR lasers

Citation
Jr. Meyer et al., Type II W, interband cascade and vertical-cavity surface-emitting mid-IR lasers, IEE P-OPTO, 145(5), 1998, pp. 275-280
Citations number
28
Categorie Soggetti
Optics & Acoustics
Journal title
IEE PROCEEDINGS-OPTOELECTRONICS
ISSN journal
13502433 → ACNP
Volume
145
Issue
5
Year of publication
1998
Pages
275 - 280
Database
ISI
SICI code
1350-2433(199810)145:5<275:TIWICA>2.0.ZU;2-4
Abstract
The authors review recent demonstrations of improved mid-IR laser performan ce when a type II 'W-well' structure is incorporated into the active region . The W configuration consists of a hole quantum well (e.g. GaSb or GaInSb) between electron quantum wells (e.g. InAs) in order to maximise the gain w hile suppressing nonradiative Auger losses. Optically pumped W lasers recen tly produced more than 1.4 W per facet peak power for pulsed operation at 3 00 K. An interband cascade laser with a W active region (W-ICL) has operate d up to 286 K. The first III-V mid-IR VCSEL (lambda = 2.9 mu m) with a W ac tive region has lased up to 280 K for pulsed operation and to 160 K for cw, with a cw threshold of only 4 mW for a 6 mu m spot at 78 K.