Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates

Authors
L'vova, TV Andreev, IA Kunitsyna, EV Mikhailova, MP Ulin, VP Yakovlev, YP
Citation
Tv. L'Vova et al., Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates, IEE P-OPTO, 145(5), 1998, pp. 303-306
Citations number
12
Categorie Soggetti
Optics & Acoustics
Journal title
IEE PROCEEDINGS-OPTOELECTRONICS
ISSN journal
13502433 → ACNP
Volume
145
Issue
5
Year of publication
1998
Pages
303 - 306
Database
ISI
SICI code
1350-2433(199810)145:5<303:LEGOGC>2.0.ZU;2-Y
Abstract
The authors have performed theoretical and experimental investigations of t he chemical interaction between mono- and disulphide water sodium solutions and (100) surfaces of GaSb. It is shown that the pre-epitaxial sulphide tr eatment of the GaSb substrate improves morphology and interface abruptness of the GaSb/GaInAsSb heterostructures grown by liquid phase epitaxy (LPE).