LOW-TEMPERATURE SHALLOW JUNCTION FORMATION USING VACUUM-ULTRAVIOLET PHOTONS DURING RAPID THERMAL-PROCESSING

In this letter, we have demonstrated phosphorus diffusion into silicon at a temperature of 700 degrees C using dual spectral source rapid th ermal processing (RTP). The optical energy of vacuum ultraviolet irrad iation in conjunction with tungsten halogen lamps (light source used i n conventional RTP) is responsible for diffusion at low temperatures. Shallow junctions with high surface concentration were formed and no s ignificant degradation in the bulk minority carrier lifetimes was obse rved. A qualitative explanation for the observed results is offered ba sed on the role of photoeffects in RTP. (C) 1997 American Institute of Physics.