STRUCTURE CONTROL OF PB(ZR,TI)O-3 FILMS USING PBTIO3 BUFFER LAYERS PRODUCED BY MAGNETRON SPUTTERING

The orientation of Pb(Zr,Ti)O-3 (PZT) thin films grown by sputtering o n a Si/SiO2/Ti/Pt substrate using a PbTiO3 (PT) buffer layer was contr olled by changing the thickness of the buffer layer. The x-ray diffrac tion of PT as a function of the thickness, in the range of 20-400 Angs trom, showed modification of the PT orientation. That suggests a gradu al evolution of the lattice parameters in the nucleation stage of PT f ilms. The main growth mechanism was certainly due to the passing from an island growth to a continuous layer. The (111) oriented and (100) o riented PZT films were grown on 50 and 200 Angstrom PT buffer layers, respectively. (C) 1997 American Institute of Physics.