Temperature dependent measurements of the 1.54 mu m photoluminescence
of Er implanted N codoped crystalline Si are made. Upon increasing the
temperature from 12 to 150 K, the intensity quenches by more than a f
actor thousand, while the lifetime quenches from 420 to 3 mu s. The qu
enching processes are described by an impurity Auger energy transfer m
odel that includes bound exciton dissociation and a nonradiative energ
y backtransfer process. Electron and hole trap levels are determined.
Direct evidence for a backtransfer process follows from spectral respo
nse measurements on an Er-implanted Si solar cell. (C) 1997 American I
nstitute of Physics.