EXCESS CARRIER LIFETIME OF 3C-SIC MEASURED BY THE MICROWAVE PHOTOCONDUCTIVITY DECAY METHOD

Excess carrier lifetime of 3C-SiC grown on a Si substrate by chemical vapor deposition is measured at room temperature by the noncontact mic rowave photoconductivity decay method. A N-2 laser is used to excite c arriers in the SiC layer. The measured decay curves of the excess carr ier concentration have fast (tau approximate to 3 mu s) and slow (tau> 200 mu s) components. The origin of the slow decay is discussed on the basis of the numerical simulation of the recombination process, and t he presence of traps with a very small electron capture cross section (<1x10(-21) cm(2)) is predicted. (C) 1997 American Institute of Physic s.