SEPARATION OF PLASMA IMPLANTATION OF OXYGEN TO FORM SILICON-ON-INSULATOR

Separation by plasma implantation of oxygen (SPIMOX) is an economical method for silicon-on-insulator (SOI) wafer fabrication. This process employs the plasma immersion ion implantation (PIII) for the implantat ion of oxygen ions. The implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implanta tion. The simpler implanter set-up is lower in cost and easier to main tain. The feasibility of SPIMOX has been demonstrated with successful fabrication of SOI structures implementing this process. The operation al phase space on implantation condition, oxygen dose, and annealing r equirement are identified. Secondary ion mass spectrometry analysis an d cross-sectional transmission electron microscopy micrographs of the SPIMOX sample showed continuous buried oxide under single crystal over layer with sharp silicon/oxide interfaces. (C) 1997 American Institute of Physics.