ANALYSIS OF IN0.07GA0.93AS LAYERS ON GAAS COMPLIANT SUBSTRATES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION

Double crystal x-ray diffraction data is presented from the most exten sive compliant substrate experiment to date. Five consecutive InGaAs-G aAs growths were performed simultaneously on GaAs-based thin film comp liant substrates and thick reference substrates. The In0.07Ga0.93As la yers were grown to thicknesses below and above the conventional critic al thickness. It was found that InGaAs films grown on the compliant su bstrates have a larger critical thickness and slower strain relief tha n InGaAs grown on conventional GaAs substrates. (C) 1997 American Inst itute of Physics.