Heteronuclear and homonuclear surface abstraction reactions of Cl, Br, andF

Citation
Gp. Kota et al., Heteronuclear and homonuclear surface abstraction reactions of Cl, Br, andF, J APPL PHYS, 85(1), 1999, pp. 74-86
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
1
Year of publication
1999
Pages
74 - 86
Database
ISI
SICI code
0021-8979(19990101)85:1<74:HAHSAR>2.0.ZU;2-H
Abstract
Surface reactions of atomic halogen atoms play important roles in various p lasma etching processes, commonly used in microlectronics manufacturing. Ho wever, relatively little is known about the surface chemistry of these key reactive intermediates. Previous measurements of the recombination coeffici ents of Cl, Br, and F on various surfaces in a molecular beam apparatus ind icated that the recombination reaction is pseudofirst order [G. P. Kota, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A 16, 270 (1998); 16, 2 215 (1998)]. One mechanism that would result in pseudofirst order kinetics is a two-step process in which the first halogen atom adsorbs into a relati vely strongly bound chemisorbed state, and the second atom reacts with it e ither through a direct reaction, or after being physisorbed onto the haloge nated surface. In this article, we report experiments in which surfaces are first exposed to a molecular beam of one type of halogen atom, then the su rface is exposed to a second type of halogen. During the second exposure, t he heteronuclear reaction product is monitored with a mass spectrometer. Fi nally, the surface is sputtered and the mass spectrometer is used to detect any remaining presence of the original halogen atom. Analogous experiments were also performed with isotopically enriched mixtures of chlorine. These experiments unambiguously demonstrate that halogen atom surface recombinat ion involves a two step adsorption- abstraction mechanism. Under all condit ions studied, the surface recombination reactions proceeded at rates on the order of surface collision frequencies. The relative magnitudes of the het eronuclear rates (as a function of surface composition and halogen atom typ e) scaled in the same way as the homonuclear recombination probabilities me asured previously. In every case examined, after the second halogen exposur e, the surface retained a significant coverage of the halogen that had been originally exposed to the surface. This leads to the conclusion that only a fraction of the strongly bound surface sites are available for abstractio n by free radical attack. Absolute calibration of the incident and evolved species fluxes allowed an estimate to be made of the reactive site densitie s for several surfaces. These ranged from 10(12) to 10(15) cm(-2) depending on the surface. (C) 1999 American Institute of Physics. [S0021-8979(99)087 01-0].