Surface reactions of atomic halogen atoms play important roles in various p
lasma etching processes, commonly used in microlectronics manufacturing. Ho
wever, relatively little is known about the surface chemistry of these key
reactive intermediates. Previous measurements of the recombination coeffici
ents of Cl, Br, and F on various surfaces in a molecular beam apparatus ind
icated that the recombination reaction is pseudofirst order [G. P. Kota, J.
W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A 16, 270 (1998); 16, 2
215 (1998)]. One mechanism that would result in pseudofirst order kinetics
is a two-step process in which the first halogen atom adsorbs into a relati
vely strongly bound chemisorbed state, and the second atom reacts with it e
ither through a direct reaction, or after being physisorbed onto the haloge
nated surface. In this article, we report experiments in which surfaces are
first exposed to a molecular beam of one type of halogen atom, then the su
rface is exposed to a second type of halogen. During the second exposure, t
he heteronuclear reaction product is monitored with a mass spectrometer. Fi
nally, the surface is sputtered and the mass spectrometer is used to detect
any remaining presence of the original halogen atom. Analogous experiments
were also performed with isotopically enriched mixtures of chlorine. These
experiments unambiguously demonstrate that halogen atom surface recombinat
ion involves a two step adsorption- abstraction mechanism. Under all condit
ions studied, the surface recombination reactions proceeded at rates on the
order of surface collision frequencies. The relative magnitudes of the het
eronuclear rates (as a function of surface composition and halogen atom typ
e) scaled in the same way as the homonuclear recombination probabilities me
asured previously. In every case examined, after the second halogen exposur
e, the surface retained a significant coverage of the halogen that had been
originally exposed to the surface. This leads to the conclusion that only
a fraction of the strongly bound surface sites are available for abstractio
n by free radical attack. Absolute calibration of the incident and evolved
species fluxes allowed an estimate to be made of the reactive site densitie
s for several surfaces. These ranged from 10(12) to 10(15) cm(-2) depending
on the surface. (C) 1999 American Institute of Physics. [S0021-8979(99)087
01-0].