Confocal micro-Raman characterization of lattice damage in high energy aluminum implanted 6H-SiC

High energy (MeV) and low dose aluminum implants were performed in p-type 6 H-SiC at room temperature. The material was characterized by means of Ruthe rford backscattering in channeling configuration and confocal micro-Raman s cattering. The damage induced changes in the optical absorption coefficient of the implanted layer can be extracted from the depth profiling of the fi rst order Raman intensity of the undamaged portion of the sample, using a c onfocal microprobe setup. Optical modeling indicates the formation of two l ayers: an outermost and low absorbing layer with thickness proportional to the energy of the bombarding ions, and a more highly damaged and absorbing layer. Since the damage level is low, the disorder can be essentially remov ed by annealing at relatively low temperatures. (C) 1999 American Institute of Physics. [S002-18979(99)00901- 9].