Gallium implantation induced deep levels in n-type 6H-SIC

Two Ga-acceptor levels, located at E-V + 0.31 eV and E-V + 0.37 eV, respect ively, have been observed in the gallium implantation manufactured p(+) n d iodes using deep level transient spectroscopy. The behavior of the implante d gallium is very similar to that of implanted aluminum, except that the po sitions of the introduced levels are different. This result strongly suppor ts the recent model, which was used to explain the discrepant results betwe en boron and aluminum implantation induced deep levels. Besides the two acc eptor levels, a thermally stable electron trap is also observed and has bee n tentatively attributed to a Ga-related complex. (C) 1999 American Institu te of Physics. [S0021-8979(99)01201- 3].