Diffusion during metalorganic vapor-phase epitaxy on V-groove patterned substrates

We studied the diffusion process in metalorganic vapor-phase epitaxy of InG aAs on V-groove patterned InP substrates. A model, recently developed for s elective-area growth on planar patterned substrates, enabled us to analyze growth rate distribution and to determine diffusion lengths of growing spec ies. Atomic force microscopy (AFM) and photoluminescence measurements have been employed to measure the growth rate and composition of the ternary all oy. A new technique based on composition sensitive etching combined with et ch rate measurements by cross-section AFM reveals the reduced solidifying p robability of Ga on {111}A planes as the origin of compositional variations . (C) 1999 American Institute of Physics. [S0021-8979(99)06801-2].