Study of frequency dependent epsilon*(omega) in amorphous ferroelectrics: Modified generalized Langevin equation analysis

Citation
Sh. Kim et al., Study of frequency dependent epsilon*(omega) in amorphous ferroelectrics: Modified generalized Langevin equation analysis, J APPL PHYS, 85(1), 1999, pp. 347-351
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
1
Year of publication
1999
Pages
347 - 351
Database
ISI
SICI code
0021-8979(19990101)85:1<347:SOFDEI>2.0.ZU;2-N
Abstract
We studied the frequency dependent dielectric constants of amorphous LiNbO3 , KNbO3, and PbTiO3 at temperatures below the crystallization. We analyzed the real and imaginary part of dielectric constants epsilon'(omega) and eps ilon "(omega) using the generalized Langevin equation modified by the space charge effect and the phenomenological frequency scaling. With this model, we can explain the low frequency dispersion and the high frequency relaxat ion behavior of epsilon'(omega) and epsilon "(omega) simultaneously. Our ap proach is new and different from our previous equivalent circuit model. (C) 1999 American Institute of Physics. [S0021-8979(99)01301-8].