Nanolithography by selective chemical vapor deposition with an atomic hydrogen resist

Authors
Mitsui, T Hill, E Ganz, E
Citation
T. Mitsui et al., Nanolithography by selective chemical vapor deposition with an atomic hydrogen resist, J APPL PHYS, 85(1), 1999, pp. 522-524
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
1
Year of publication
1999
Pages
522 - 524
Database
ISI
SICI code
0021-8979(19990101)85:1<522:NBSCVD>2.0.ZU;2-R
Abstract
We report the fabrication of Al nanostructures using selective chemical vap or deposition (CVD) growth and an atomic hydrogen resist. A scanning tunnel ing microscope is used to pattern the hydrogen terminated surface by local removal of hydrogen atoms. The high selectivity of the CVD process limits A l growth to the uncovered regions. We demonstrate the fabrication of Al fea tures as small as 2 nm. (C) 1999 American Institute of Physics. [S00218979( 98)02924-7].