Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001)

Authors
Liu, FQ Wang, ZG Wu, J Xu, B Gong, Q Liang, JB
Citation
Fq. Liu et al., Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001), J APPL PHYS, 85(1), 1999, pp. 619-621
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
1
Year of publication
1999
Pages
619 - 621
Database
ISI
SICI code
0021-8979(19990101)85:1<619:SAPOIS>2.0.ZU;2-T
Abstract
Molecular beam epitaxy has been used for growing InGaAs self-assembled quan tum dots (QDs) in InAlAs on an InP(001) substrate. Nominal deposition of 9. 6 monolayers of In0.9Ga0.1As results in QDs of similar to 6.5 nm high with an areal density of 3.3 X 10(11) cm(-2). Conspicuous bimodal size distribut ion is identified, and is responsible for the observed QDs photoluminescenc e (PL) emission with two peaks at 0.627 and 0.657 eV. Good agreement is ach ieved between the observed PL peak energies and calculated results. (C) 199 9 American Institute of Physics. [S00218979(99)00101-2].