A method for calculating the emissivity of Si wafers with planar and nonpla
nar (such as rough or textured) surface morphologies is described. The tech
nique is similar to that used in modeling of light trapping in solar cells
and is also applicable to those cases when the wafer may have thin dielectr
ic or metal layers. A software package is developed that uses this method.
This package includes an approach for calculating the refractive index and
absorption coefficient as a function of wavelength, for various temperature
s and dopant concentrations. We present results for a number of cases to de
monstrate the applications of this model.