Direct deposition of silica films using silicon alkoxide solution

Citation
J. Oh et al., Direct deposition of silica films using silicon alkoxide solution, J NON-CRYST, 241(2-3), 1998, pp. 91-97
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
241
Issue
2-3
Year of publication
1998
Pages
91 - 97
Database
ISI
SICI code
0022-3093(199811)241:2-3<91:DDOSFU>2.0.ZU;2-#
Abstract
Dense silica films were directly deposited on a substrate in basic solution s (similar to pH 11) of tetraethoxysilane (TEOS) at temperatures <60 degree s C. The film formation was observed through heterogeneous nucleation on a hydrophilic surface with the intermediate condition between gel formation a nd stable solution. The refractive index, the OH content and the hardness i ndicate that the structure of the deposited films are similar to that of so l-gel silica films calcined at 500 degrees C. We suggest that the growth an d the densification of the films occur simultaneously during the deposition in the solutions. (C) 1998 Elsevier Science B.V. All rights reserved.