Excited oxygen-deficient center in silicon dioxide as a structurally non-rigid, mixed-valence complex

Citation
Vv. Tugushev et Km. Golant, Excited oxygen-deficient center in silicon dioxide as a structurally non-rigid, mixed-valence complex, J NON-CRYST, 241(2-3), 1998, pp. 166-173
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
241
Issue
2-3
Year of publication
1998
Pages
166 - 173
Database
ISI
SICI code
0022-3093(199811)241:2-3<166:EOCISD>2.0.ZU;2-M
Abstract
A possible mechanism is proposed for UV light induced refractive index chan ge in silica glass which results from densification of the SiO2 matrix arou nd photo-excited neutral oxygen vacancies (oxygen-deficient centers ODC). S uch densification is supposed to be due to a 'local phase transition' induc ed by a transformation of one of the valence sp-electrons of the ODC from a localized to a partially delocalized state. Theoretically, the latter stat e arises in constructing the energy spectrum of a singly excited, relaxed O DC and may be interpreted as an intermediate-radius exciton-like state in t he framework of the Falicov model for mixed-valence systems. It is shown th at the partially delocalized state can become energetically favorable as co mpared to the localized one. This mechanism of the photorefractive effect e liminates the contradiction between a large refractive index change and a r elatively small ODC concentration in silicas, because it does not invoke th e assumption of a photo-induced change in polarizability of point defects. (C) 1998 Elsevier Science B.V. All rights reserved.