Equilibrium shape diagram for strained Ge nanocrystals on Si(001)

Citation
Rs. Williams et al., Equilibrium shape diagram for strained Ge nanocrystals on Si(001), J PHYS CH B, 102(48), 1998, pp. 9605-9609
Citations number
27
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY B
ISSN journal
15206106 → ACNP
Volume
102
Issue
48
Year of publication
1998
Pages
9605 - 9609
Database
ISI
SICI code
1520-6106(19981126)102:48<9605:ESDFSG>2.0.ZU;2-O
Abstract
We introduce a chemical-thermodynamic model to explain the formation and an nealing behavior of Ge nanocrystalline islands grown on Si(001). Assuming t he nanocrystals are essentially large adsorbed molecules, we propose a simp le free energy expression for islands of different shapes interacting with each other via the substrate on which they reside. Nanocrystal growth, disa ppearance, and shape transitions are all consonant with a near-equilibrium system constrained by mass conservation and characterized by interisland re pulsions. We construct an equilibrium shape diagram from experimentally det ermined free energy differences between island shapes and use it to resolve several anomalies that have been noted for the Ge on Si(001) system.