Effect of Ce doping on Raman-active crystal-field excitations in Nd2-xCexCuO4

Citation
S. Jandl et al., Effect of Ce doping on Raman-active crystal-field excitations in Nd2-xCexCuO4, J PHYS CH S, 59(10-12), 1998, pp. 1985-1987
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN journal
00223697 → ACNP
Volume
59
Issue
10-12
Year of publication
1998
Pages
1985 - 1987
Database
ISI
SICI code
0022-3697(199810/12)59:10-12<1985:EOCDOR>2.0.ZU;2-
Abstract
Raman-active crystal-field (CF) excitations between the I-4(9/2) and I-4(11 /2) manifolds of Nd3+ in Nd2-xCexCuO4 have been studied as a function of th e cerium content x. With increasing x the main CF peaks become triplets. Th is indicates that the Nd3+ ions occupy sites with distinct local environmen ts where they experience different CFs. Changes in the relative intensities of the CF peaks with x. reflect the increasing perturbation of the system when cerium is introduced. The results show that CF Raman spectroscopy can be used, in addition to neutron scattering, as a local probe of doping-indu ced phenomena in high-temperature superconductors. (C) 1998 Elsevier Scienc e Ltd. All rights reserved.