Temperature dependent effects on the electronic structure, resistivity andelectron-phonon coupling of HgBa2CuO4

Citation
G. Santi et T. Jarlborg, Temperature dependent effects on the electronic structure, resistivity andelectron-phonon coupling of HgBa2CuO4, J PHYS CH S, 59(10-12), 1998, pp. 2121-2124
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN journal
00223697 → ACNP
Volume
59
Issue
10-12
Year of publication
1998
Pages
2121 - 2124
Database
ISI
SICI code
0022-3697(199810/12)59:10-12<2121:TDEOTE>2.0.ZU;2-
Abstract
The electronic structure of HgBa2CuO4 is calculated for some lattice distor tions. This compound has only one Fermi Surface (FS) structure (barrel) and is supposedly typical for several high-T-c oxides with very two-dimensiona l bands. This makes the electron-phonon coupling (lambda) sensitive to some modes. The electronic structure changes with atomic displacements so that the coupling becomes non-linear. The large anisotropy, making the material almost insulating in the z-direction, is found to be essential for weak scr eening during phonon movements. These effects contribute to large lambda an d unusual T-dependence of the resistivity. (C) 1998 Elsevier Science Ltd. A ll rights reserved.