Comparison of the hole mobility in undoped and boron-doped polycrystallineCVD diamond films

Authors
Pleskov, Y Tameev, A Varnin, V Teremetskaya, I
Citation
Y. Pleskov et al., Comparison of the hole mobility in undoped and boron-doped polycrystallineCVD diamond films, J SOL ST EL, 3(1), 1998, pp. 25-30
Citations number
19
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF SOLID STATE ELECTROCHEMISTRY
ISSN journal
14328488 → ACNP
Volume
3
Issue
1
Year of publication
1998
Pages
25 - 30
Database
ISI
SICI code
1432-8488(199812)3:1<25:COTHMI>2.0.ZU;2-I
Abstract
The drift mobility of nonequilibrium holes injected in undoped polycrystall ine diamond films was determined, by a transit-time technique, as ca. 10(-3 ) cm(2)/(V s). This hole mobility is three orders of magnitude lower than t he "equilibrium" mobility in boron-doped diamond films [0.1-1 cm(2)/(V s)], determined from the films' de conductivity. This difference is explained b y the effect of a nonequilibrium charge carrier trapping during the carrier transport in polycrystalline diamond.