Interaction between gas rarefaction and metal ionization in ionized physical vapor deposition

Authors
Citation
Sm. Rossnagel, Interaction between gas rarefaction and metal ionization in ionized physical vapor deposition, J VAC SCI B, 16(6), 1998, pp. 3008-3012
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
16
Issue
6
Year of publication
1998
Pages
3008 - 3012
Database
ISI
SICI code
1071-1023(199811/12)16:6<3008:IBGRAM>2.0.ZU;2-Q
Abstract
The process known as ionized physical vapor deposition, or I-PVD, consists of the physical sputtering of metal atoms into a dense, inert gas plasma; i onization of the sputtered metal atoms, and subsequent deposition of the fi lms from these metal ions. Measurements have shown a decrease in electron t emperature coupled with an unexpected decrease in plasma density as a funct ion of increasing metal flux. Recent plasma modeling work has suggested gas rarefaction as the underlying factor in these declines. Measurements of ne utral gas density in the plasma region reported here confirm this model and are consistent with earlier studies of sputtered atom induced gas heating and rarefaction. (C) 1998 American Vacuum Society. [S0734-211X(98)01106-8].