Ion projection lithography: Status of the MEDEA project and United States European cooperation

Structure and targets of the European MEDEA project on ion projection litho graphy as well as related U.S./European cooperation are explained. By assum ing 10 mu m virtual source size and 1 eV (full width half maximum) energy s pread calculations for a multielectrode electrostatic ion-optical system (1 .25 m between ion source and stencil mask, approximate to 1.8 m between mas k and wafer) we realize the possibility of 100 nm resolution (line and spac e) over an exposure field of 22 x 22 mm(2) even when using the MONTEC model for calculating the stochastic blur and when running 3.3 mu A He+ ion beam current through the ion-optical column, thus more than twice exceeding tar get specifications. Thus, for 100 nm resolution and 50% pattern density the raw throughput is approximate to 12 cm(2)/s corresponding to >75 WPH (patt ern within 80% of 300 mm wafer area). (C) 1998 American Vacuum Society. [S0 734-211X(98)18406-8].