The state-of-the-art for mask making continues to be driven by 1x x-ray mas
ks. The IBM EL4+ e-beam mask writer at the Advanced Mask Facility in Burlin
gton, Vermont, was originally designed for 0.35 mu m ground rules (GRs) dir
ect write at 50 kV, but delivered at 75 kV operation to achieve 0.25 mu m G
R performance for 1x mask making. Over the next 2 years, with optimization
and improvements in each of the subsystems, its performance was enhanced be
yond the 0.18 mu m GR requirements. It is clear, however, that for 0.13 and
0.1 mu m GR mask manufacturing, a new tool is required. It has also become
apparent that because of the very high development and tool build costs, a
nd small number of required x-ray mask makers, the same technology must be
applicable for chrome on glass (COG) mask making. Based on the experience w
ith EL4+, IBM is designing an EL5 tool which will provide the 0.13/0.1 mu m
GR performance for 1x, and easily convert to 4x COG exposure for 9 in. gla
ss as well as 300 mm wafer direct write operation. As with previous IBM EL
series e-beam systems, it is anticipated that EL5 performance will be exten
dable beyond 0.1 mu m GR. (C) 1998 American Vacuum Society. [S0734-211X(98)
04806-9].