Patterned negative electron affinity photocathodes for maskless electron beam lithography

Citation
Je. Schneider et al., Patterned negative electron affinity photocathodes for maskless electron beam lithography, J VAC SCI B, 16(6), 1998, pp. 3192-3196
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
16
Issue
6
Year of publication
1998
Pages
3192 - 3196
Database
ISI
SICI code
1071-1023(199811/12)16:6<3192:PNEAPF>2.0.ZU;2-K
Abstract
This work focuses on two issues crucial to achieving high throughput with a negative electron affinity semiconductor photocathode source. Monte Carlo simulations indicate that for a 50 kV system, as much as 8 mu A of current may be delivered to the wafer to achieve a raw throughput of 20 8 in. wafer s per hour with 0.1 mu m minimum feature size (assuming a resist sensitivit y of 10 mu C/cm(2)). In order to achieve the throughput potential of this a pproach, suboptical emission areas are required; this suggests the use of c athode patterning. Two patterning alternatives have been investigated exper imentally, and both approaches have been used to generate arrays of more th an 100 electron beams with source sizes as small as 150 nm. However, each t ype of patterned cathode presents unique challenges to fabrication and perf ormance in a practical multibeam system. Different source configurations (n umber of beams, beam current, beam spacing, etc.) create a system-level tra deoff between resolution and throughput. Results from patterned cathode exp eriments and system modeling are presented. (C) 1998 American Vacuum Societ y. [S0734-211X(98)15806-7].