Comparative study of AZPN114 and SAL601 chemically amplified resists for electron beam nanolithography

With the minimum feature dimension of integrated circuits (ICs) shrinking t o below 130 nm, the IC industry has to choose one among a number of nonopti cal lithography tools. Electron beam direct write or mix-and-match lithogra phy is an attractive choice because of the maturity of the technology and t he potential of using the tool for several generations of ICs. The low thro ughput associated with e-beam direct writing of wafers can be significantly reduced by using chemically amplified resists. Two commercially available negative tone chemically amplified resists, AZPN114 and SAL601, were invest igated and compared for their performance in e-beam direct writing of wafer s at 150, 100, and sub-50, nm resolutions. A number of factors influencing the throughput issue were evaluated. The latitudes of postexposure bake and postexposure delay were compared. It is found that both resists are of hig h resolution and high contrast, with the highest resolution, 30 nm, achieve d for AZPN114. AZPN114 has higher sensitivity and is more stable during pos texposure delay than SAL601 but less stable during postexposure bake. A 6 i n, industrial wafer was exposed with AZPN114 at gate level at 150 nm resolu tion using e-beam lithography and it showed feature uniformity across the e ntire wafer. (C) 1998 American Vacuum Society. [S0734-211X(98)05706-0].