We have evaluated the performance of an optical projection lithography came
ra employing a two-mask resolution enhancement technique proposed by Matsum
oto et al. [K Matsumoto et al., Proc. SPIE 2197, 844 (1994)] and Kamon et a
l. [K. Kamon et al., Jpn. J. Appl. Phys., Part 1 33, 6848 (1994)] in 1994 t
hat automatically provides a different illumination for every feature on th
e reticle. Our simulations show that such a system can provide better imagi
ng performance than a system that employs ordinary quadrupole illumination
and can enhance the depth of focus by more than 50% in specific cases. (C)
1998 American Vacuum Society.