Thermal annealing of deep ultraviolet (193 nm) induced compaction in fusedsilica

Citation
P. Fan et al., Thermal annealing of deep ultraviolet (193 nm) induced compaction in fusedsilica, J VAC SCI B, 16(6), 1998, pp. 3419-3421
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
16
Issue
6
Year of publication
1998
Pages
3419 - 3421
Database
ISI
SICI code
1071-1023(199811/12)16:6<3419:TAODU(>2.0.ZU;2-J
Abstract
Different 1995-1996 ultraviolet (UV) grade experimental fused silica sample s were evaluated for their resistance to UV-induced compaction at 193 nm un der elevated sample temperature conditions. We found that the compaction ra te decreases with increasing sample temperature. Compaction recoveries were observed at temperatures as low as 120 degrees C, this suggests that the r ecovery of UV-induced compaction in fused silica is a thermally excited pro cess with a low activation energy. Isothermal annealing experiments were pe rformed on two different sets of precompacted fused silica samples. An acti vation energy of 0.13 eV was found for both cases. (C) 1998 American Vacuum Society.