Deep-ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance

The precise control of the exposure step provided by interferometric photol ithography facilitates studies of chemically amplified resist physics, chem istry, and functional properties that are difficult using more conventional exposure techniques. We describe here the design and operating characteris tics of a deep-ultraviolet interferometric lithography tool designed specif ically for the study of high resolution chemically amplified resists. We pr ovide an example of its use to evaluate resist response to controlled varia tions in aerial image contrast. (C) 1998 American Vacuum Society. [S0734-21 1X(98)15506-3].