Top surface imaging process and materials development for 193 nm and extreme ultraviolet lithography

The maturity and acceptance of top surface imaging (TSI) technology have be en hampered by several factors including inadequate resist sensitivity and line edge roughness. We have found that the use of a chemically amplified r esist can improve the sensitivity in these systems by 1.5-2x without compro mising the Line edge roughness. In addition, we have shown improved line ed ge roughness by increasing the molecular weight of the polymeric resin in t he resist. Using these materials approaches, we have been able to show exce llent resolution images with the TSI-process for both 193 nm and extreme ul traviolet (13.4 nm) patterning: (C) 1998 American Vacuum Society. [S0734-21 1X(98)17006-3].