Gc. Abeln et al., Approaches to nanofabrication on Si(100) surfaces: Selective area chemicalvapor deposition of metals and selective chemisorption of organic molecules, J VAC SCI B, 16(6), 1998, pp. 3874-3878
The selective removal of hydrogen from a passivated Si(100) surface with an
ultrahigh vacuum scanning tunneling microscope (STM) allows nanometer-size
d ''templates'' of clean Si(100) to be defined on an otherwise unreactive s
urface. Such depassivated areas have already been shown to react selectivel
y with O-2 and NH3 in preference to the surrounding H-terminated surface. T
his selectivity suggests two more sophisticated approaches to fabricating n
anostructures with this technique: (1) selective metallization by thermal c
hemical vapor deposition, and (2) formation of ordered organic monolayers b
y reaction with specific organic molecules. In the first case, an intrinsic
difference in the reaction rate of a metal precursor with the clean and H-
terminated Si(100) surface results in selective deposition of a metal on th
e STM-patterned area. In order to prevent hydrogen desorption and loss of s
electivity, the metal precursor must dissociate its ligands at relatively l
ow temperatures. Tn the second case, the patterned surface is exposed to an
organic molecule expected to react in a site specific manner with unsatura
ted Si dimer sites. An example of this site selective reaction is the [2+2]
cycloaddition reaction between carbon-carbon double bonds and the Si dimer
bond. Such reactions can result in the formation of spatially resolved nan
ometer-sized regions containing organic monolayers. In this article we desc
ribe progress toward the fabrication of nanostructures utilizing these two
techniques. First, we discuss the use of a new amidoalane precursor for the
selective chemical vapor deposition of aluminum on STM-patterned Si(100) S
urfaces, as well as the selective patterning of a nucleation promoter, TiCl
4, commonly used to initiate aluminum film growth. We also discuss the sele
ctive chemisorption of norbornadiene (bicyclo[2.1.1] hepta-2,5-diene) on ST
M-patterned areas. STM images reveal the formation of a norbornadiene adlay
er with indications of local ordering. Both of these methods show promise a
s techniques for the fabrication of nanostructures on Si(100) surfaces. (C)
1998 American Vacuum Society. [S0734-211X(98)03906-7].