Nn. Gribov et al., Fabrication of metallic point contacts: A new approach for devices with a multilayer or a heterointerface, J VAC SCI B, 16(6), 1998, pp. 3943-3947
Thin silicon membranes on silicon on insulator substrates are used to fabri
cate point contacts with a well-defined interface in the nanoconstriction b
etween the two metal electrodes. Transmission electron microscope images of
heterointerfaces in conjunction with energy dispersive x-ray analysis of t
he interfacial region show the capabilities of the process and its limitati
ons. The latter involve material-specific phenomena on a nanoscale, such as
an interfacial reaction between a metal film and SiO2 and metal diffusion
across the heterointerface. These adverse effects can be avoided by a prope
r choice of the metals and the deposition temperature, as demonstrated with
results of electrical measurements on a Au/Cu heterocontact. (C) 1998 Amer
ican Vacuum Society. [S0734-211X(98)15206-X].