T. Torimoto et al., Photoelectrochemical properties of size-quantized CdS thin films prepared by an electrochemical method, LANGMUIR, 14(25), 1998, pp. 7077-7081
Size-quantized CdS thin films were prepared by sequential underpotential de
position of S and Cd on Au(lll). The prepared films in an aqueous solution
containing triethanolamine as a sacrificial electron donor showed n-type ph
otoelectrode behaviors. Action spectra of anodic photocurrents were red-shi
fted with an increase of the film thickness toward characteristic values of
those of bulk materials. The energy gap of the film determined from the ac
tion spectra showed a remarkable tendency of decrease with an increase of t
he film thickness up to 3.5 nm. Beyond 3.5 nm the rate of decrease with inc
rease in the film thickness declined. An energy gap value characteristic of
bulk materials was obtained with CdS films greater than 6.8 nm.